Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

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Guangdong Huixin Electronics Technology Co., Ltd.

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Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

Name: Epitaxial Fast Recovery Rectifier Diode 600V 1A DO41 Package Open Junction Chip
Brand: Huixin
Price: 1 USD

Best Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip wholesale

Brand Name : Huixin

Model Number : UF4005 DO-41

Certification : ISO14001 ISO9001 ISO/TS16949 UL

Place of Origin : China

MOQ : 5000 PCS

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 5000pcs/reel/box

Type : Epitaxial diode

Package : DO-41

MPQ : 5000PCS

Sample Time : 5-7 Days

Lead Free Status : RoHS

Max. Forward Current : 1.0Amp

Max. Reverse Voltage : 600V

Material : Silicon

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Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

1.0 A 600V Diode DO-41 Package Fast Rectifier Diode

UF4001~UF4007 DO-41 Datasheet.pdf

Features:

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
Open Junction chip
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed

Mechanical Data:

Case : Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.0088 ounce, 0.25 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter		SYMBOLS	UF4001	UF4002	UF4003	UF4004	UF4005	UF4006	UF4007	UNITS

Maximum Repetitive Peak Reverse Voltage		VRRM	50	100	200	400	600	800	1000	Volts
Maximum RMS Voltage		VRMS	35	70	140	280	420	560	700	Volts
Maximum DC Blocking Voltage		VDC	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Rectifier Current at TL=100°C		IF(AV)	1.0							Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load		IFSM	30							Amps
Maximum Instantaneous Forward Voltage at 1A		VF	1				1.4	1.7		Volts
Maximum DC Reverse Current at rated DC blocking voltage	TA=25°C	IR	10							μA
	TA=125°C		500
Maximum Reverse Recovery Time		Trr	50				75			ns

Note: 1. Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

Product Tags:

ultra fast recovery diode

surface mount diode

Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip Images

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